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BLM9D2325-20AB

Part No BLM9D2325-20AB
Manufacturer Ampleon USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
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Categories Uncategorized
Manufacturer Ampleon USA Inc.
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 819473-BLM9D2325-20AB
Ultra Librarian 3D Model Ultra Librarian BLM9D2325-20AB CAD Model

Description

The BLM9D2325-20AB is a Doherty power amplifier transistor designed for base station applications in the 2300-2500 MHz frequency range. Manufactured by Ampleon, it is based on a high-voltage LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) technology, offering high efficiency and excellent linearity.

Applications

  • Base Station Transmitters (2300-2500 MHz)
  • Wireless Infrastructure
  • LTE and 5G Systems
  • Broadcast Transmitters
  • Industrial Heating
  • Medical RF Applications

Features

  • Frequency Range: 2300 - 2500 MHz
  • Output Power: 20W Average
  • High Efficiency Doherty Architecture
  • High Gain
  • Integrated ESD Protection
  • Excellent Ruggedness

Benefits

  • Improved Energy Efficiency: Doherty architecture maximizes efficiency at back-off power levels.
  • Reduced Operating Costs: Lower power consumption translates to lower energy bills.
  • Enhanced Signal Quality: Excellent linearity minimizes distortion and improves signal integrity.
  • Increased System Reliability: Robust design ensures reliable operation in harsh environments.
  • Simplified System Design: Integrated features reduce the number of external components required.

Technical Specifications

The BLM9D2325-20AB operates in the 2300 to 2500 MHz frequency range and delivers an average output power of 20 Watts. The Doherty architecture allows it to achieve high efficiency, particularly at back-off power levels, which is crucial for modern communication systems that employ complex modulation schemes. The device features integrated ESD (Electrostatic Discharge) protection, which helps prevent damage from electrostatic discharge events during handling and assembly. It is designed for surface mount assembly and is available in a compact package. The high gain of the transistor reduces the drive power requirements, simplifying the design of the RF front-end.

The transistor's ruggedness makes it suitable for use in demanding applications where it may be subjected to high VSWR (Voltage Standing Wave Ratio) conditions. The device is characterized for a variety of operating conditions, allowing designers to optimize performance for specific system requirements. It offers excellent linearity, which is essential for maintaining signal integrity in complex communication systems. The high efficiency of the Doherty architecture helps to minimize power consumption and heat generation, which reduces the size and cost of the cooling system.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $62.5624 $62.5624
3+ $51.3333 $153.9999
4+ $49.7292 $198.9168
5+ $48.1251 $240.6255
7+ $46.5209 $325.6463
9+ $41.7084 $375.3756
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Availability: 306 pieces
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