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CLF1G0035-200PU

Part No CLF1G0035-200PU
Manufacturer Ampleon USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description RF FET 50V 11DB SOT1228A / Trans RF MOSFET N-CH 150V 5-Pin CDFM Bulk
Datasheet
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ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Ampleon USA Inc.
Win Source Part Number 771581-CLF1G0035-200PU
Popularity Medium
Supply and Demand Status Limited
Family Name CLF1G0035-200PU
Introduction Date October 05, 2011
ECCN 3A001.b.3.a
Country of Origin Philippines
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian CLF1G0035-200PU CAD Model

Description

The CLF1G0035-200PU is a 200 W LDMOS power transistor designed for use in various RF power amplifier applications, manufactured by Ampleon USA Inc. This transistor is engineered to deliver high power and efficiency across a broad frequency range.

Applications:

  • Industrial Heating
  • Plasma Generators
  • Radio Base Stations
  • Broadcast Transmitters
  • Medical RF Applications (MRI)

Features:

  • High Output Power: Delivers up to 200W of RF power.
  • Broadband Operation: Suitable for applications across a wide frequency range.
  • High Efficiency: Designed for optimal power conversion efficiency.
  • LDMOS Technology: Utilizes LDMOS technology for robust performance and reliability.
  • Integrated ESD Protection: Enhanced protection against electrostatic discharge.
  • Thermally Enhanced Package: Designed for efficient heat dissipation.

Benefits:

  • High Power Capability: Enables use in high-power RF applications.
  • Improved Efficiency: Reduces power consumption and heat generation.
  • Enhanced Reliability: LDMOS technology ensures robust and reliable operation.
  • Simplified System Design: Wideband operation reduces the need for complex matching networks.
  • Increased System Performance: Excellent linearity ensures minimal signal distortion.

Additional Details:

The CLF1G0035-200PU operates at 48-50 V and is housed in a thermally efficient package to facilitate heat dissipation, which is critical for high-power applications. Its LDMOS construction provides high gain and ruggedness, essential for reliable performance in harsh operating conditions. The integrated ESD protection minimizes the risk of damage from electrostatic discharge during handling and operation. The device is designed to withstand high VSWR (Voltage Standing Wave Ratio), ensuring robust performance even under mismatched load conditions. The datasheet provides comprehensive information on biasing conditions, matching network design, and thermal management. Ampleon provides application notes and reference designs to aid engineers in implementing this transistor in various amplifier configurations. The device is RoHS compliant.

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