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AM80N03-06D

Part No AM80N03-06D
Manufacturer Analog Power
Catalog Hard To Find
Description N-Channel 30-V (D-S) MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Analog Power
Win Source Part Number 1144205-AM80N03-06D
Manufacturer Homepage www.analogpowerinc.com/index.html
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AM80N03-06D CAD Model

Description

The AM80N03-06D, manufactured by Analog Power, is an N-Channel enhancement mode power MOSFET. It is designed for high-efficiency power switching applications, offering a combination of low on-resistance and fast switching speed. This MOSFET is commonly used in DC-DC converters, load switches, and power management circuits.

Applications

  • DC-DC Converters
  • Load Switches
  • Power Management Circuits
  • Battery Management Systems
  • Motor Control

Features

  • N-Channel Enhancement Mode MOSFET
  • Low On-Resistance (RDS(on))
  • High Switching Speed
  • High Avalanche Energy
  • Lead-Free and RoHS Compliant
  • TrenchFET Power MOSFET Technology

Benefits

  • High efficiency in power switching applications
  • Reduced power losses due to low on-resistance
  • Fast switching speed enables higher operating frequencies
  • Improved system reliability with high avalanche energy rating
  • Environmentally friendly due to lead-free and RoHS compliance
  • Excellent thermal performance

Additional Details

The AM80N03-06D features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 80A, depending on the specific application and thermal conditions. It is available in a DFN5x6 package, which provides excellent thermal performance and allows for efficient heat dissipation. The low gate charge (Qg) contributes to its fast switching speed and reduces gate drive losses. It's designed to operate within a wide temperature range, making it suitable for both industrial and consumer applications.

This MOSFET utilizes Analog Power's advanced TrenchFET technology, which minimizes on-resistance and maximizes switching performance. The device is also protected against electrostatic discharge (ESD), further enhancing its reliability. Its compact size and high power handling capability make it an ideal choice for space-constrained applications.

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