The BS616LV8017EIG70 is a low-voltage, high-speed static RAM (SRAM) manufactured by Brilliance Semiconductor. It is designed for applications requiring fast data access and low power consumption. This 8Mb SRAM is well-suited for embedded systems, data buffering, caching, and other memory-intensive tasks.

Applications

• Embedded Systems
• Data Buffering
• Cache Memory
• Networking Equipment
• Industrial Control Systems

Features

• High-Speed Access Time: Offers a 70ns access time, ensuring quick data retrieval.
• Low-Voltage Operation: Reduces power consumption, making it ideal for battery-powered devices.
• Low Power Consumption: Minimizes energy usage, prolonging battery life and reducing heat generation.
• 8Mb Memory Capacity: Provides ample storage space for various applications.
• Wide Operating Temperature Range: Operates reliably in diverse environmental conditions.

Benefits

• Improved System Performance: Fast access times enhance overall system responsiveness.
• Extended Battery Life: Low power consumption allows for longer operation in portable devices.
• Reliable Data Storage: Ensures data integrity and stability in critical applications.
• Versatile Applications: Suitable for a wide range of embedded systems and memory-intensive tasks.
• Compact Design: Available in a small package, saving valuable board space.

Technical Specifications

The BS616LV8017EIG70 has a memory organization of 512K x 16 bits. It operates on a low voltage supply (typically 3.3V or 5V) and features a low standby current, minimizing power consumption when not actively in use. The operating temperature range typically spans from -40°C to +85°C. It is commonly available in various package types, including TSOP and SOP, to accommodate diverse mounting requirements.

This SRAM offers a balance of speed, power efficiency, and reliability, making it an excellent choice for a wide range of applications. Its high memory capacity and fast access times contribute to improved system performance and energy conservation.