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Same model may have multiple batches, images only for reference.
NE68518-T1-A Real Image
Same model may have multiple batches, images only for reference.

NE68518-T1-A

Part No NE68518-T1-A
Manufacturer CEL
Catalog RF Transistors (BJT)
Description RF TRANS NPN 6V 12GHZ SOT343
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr CEL
Package Tape & Reel
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 6V
Frequency - Transition 12GHz
Noise Figure (dB Typ @ f) 1.5dB @ 2GHz
Gain 11dB
Power - Max 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 10mA, 3V
Current - Collector (Ic) (Max) 30mA
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Supplier Device Package SOT-343
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.31.0000
Win Source Part Number 648365-NE68518-T1-A
Ultra Librarian 3D Model Ultra Librarian NE68518-T1-A CAD Model

Description

The 648365-NE68518-T1-A is a NPN bipolar RF transistor designed for applications in the frequency range of up to 12GHz.

  • Power Rating: 150mW
  • Voltage Breakdown: 6V
  • Maximum Collector Current: 30mA
  • Gain: 11dB
  • DC Current Gain (hFE): At least 75 @ 10mA collector current and 3V collector-emitter voltage
  • Noise Figure: 1.5dB @ 2GHz
  • Mounting: Surface mountable
  • Package: SC-82A, SOT-343
  • Operating Temperature: Up to 150°C (TJ)
  • REACH: Unaffected

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