The NE85618-T1-A is a bipolar RF transistor from CEL. It is an NPN transistor with a maximum power dissipation of 150mW.

• The transistor has a collector-emitter breakdown voltage: of 12V and a maximum collector current of 100mA.
• It offers a gain: of 13dB and has a DC current gain of 50 @ 20mA and 10V.
• The NE85618-T1-A operates @ a frequency transition: of 6.5GHz and has a noise figure of 1.1dB @ 1GHz.
• It is designed: for surface mount mounting and comes in an SC-82A, SOT-343 package.
• The transistor is obsolete: but still available in the market.
• It has a moisture sensitivity level: of 1, indicating that it has unlimited floor life.
• The NE85618-T1-A is a high-performance transistor: suitable for RF applications such as wireless communication systems, radar systems, and RF amplifiers.