The 2SD1851-TB is a high-performance NPN bipolar junction transistor (BJT) from ON Semiconductor, designed to offer efficient power switching and amplification in various electronic applications. This versatile component is well-suited for use in power management tasks, including voltage regulation, power conversion, and motor control circuits.

Key Features

• Transistor Type: NPN
• Collector-Emitter Voltage (Vceo): 60V
• Collector-Base Voltage (Vcbo): 80V
• Emitter-Base Voltage (Vebo): 7V
• Collector Current (Ic): 3A
• Power Dissipation (Pd): 25W
• DC Current Gain (hFE): 40 to 320 at Ic = 1A
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package / Case: TO-220B

Applications

The 2SD1851-TB transistor is ideal for a wide range of applications, including:

• Switching regulators
• DC-DC converters
• Motor drivers
• Audio amplifiers
• Power supplies
• General-purpose switching and amplification

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability. The 2SD1851-TB transistor is manufactured with state-of-the-art technology, ensuring consistent performance and durability. Each component is rigorously tested to meet the highest industry standards, providing engineers and designers with a reliable solution for their power control needs.

Environmental Compliance

The 2SD1851-TB is designed with environmental responsibility in mind. It complies with RoHS (Restriction of Hazardous Substances) directives, which limits the use of certain hazardous materials in electronic equipment. This makes the 2SD1851-TB an environmentally friendly choice for manufacturers looking to create sustainable products.