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Same model may have multiple batches, images only for reference.
NESG2107M33-T3-A
Same model may have multiple batches, images only for reference.

NESG2107M33-T3-A

Part No NESG2107M33-T3-A
Manufacturer CEL
Catalog RF Transistors (BJT)
Description TRANS NPN 2GHZ M33
Datasheet
NESG2107M33-T3-A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 5V
Frequency - Transition 10GHz
Noise Figure (dB Typ @ f) 0.9dB to 1.5dB @ 2GHz
Gain 7dB to 10dB
Maximum Power Dissipation 130mW
Typical Gain (hFE) (Min) 140 @ 5mA, 1V
Maximum Current Collector 100mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-SuperMiniMold (M33)
Win Source Part Number 252179-NESG2107M33-T3-A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NESG2107M33-T3-A CAD Model

Description

The NESG2107M33-T3-A is an NPN transistor from CEL.

  • Gain: 7dB to 10dB
  • Frequency transition: 10GHz
  • Noise figure: 0.9dB to 1.5dB @ 2GHz
  • Package: 3-SuperMiniMold (M33)
  • Mounting: Surface mount technology (SMT)
  • Maximum current collector: 100mA
  • VCEO maximum collector-emitter breakdown voltage: 5V
  • Typical gain (hFE) (Min): 140 @ 5mA, 1V
  • Maximum power dissipation: 130mW

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