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Same model may have multiple batches, images only for reference.
UPA802T-T1-A CEL
Same model may have multiple batches, images only for reference.

UPA802T-T1-A

Part No UPA802T-T1-A
Manufacturer CEL
Catalog RF Transistors (BJT)
Description RF DUAL TRANSISTORS NPN SOT-363
Datasheet
UPA802T-T1-A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN (Dual)
VCEO Maximum Collector-Emitter Breakdown Voltage 10V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1.4dB @ 1GHz
Gain 12dB
Maximum Power Dissipation 200mW
Typical Gain (hFE) (Min) 70 @ 7mA, 3V
Maximum Current Collector 65mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 109317-UPA802T-T1-A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UPA802T-T1-A CAD Model

Description

The CEL UPA802T-T1-A is a dual NPN transistor with a gain of 12dB and a transition frequency of 7GHz.

  • Use: Discrete semiconductor products
  • Maximum Collector-Emitter Breakdown Voltage: 10V
  • SOT-363 case/package: Surface-mount installation
  • Maximum Power Dissipation: 200mW
  • Typical Gain: 70 @ 7mA, 3V
  • Noise Figure: 1.4dB @ 1GHz
  • Temperature range for operation: Up to 150°C (TJ)
  • Supply and demand status: Balanced

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