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Same model may have multiple batches, images only for reference.
UPA814T-T1 Real Image
Same model may have multiple batches, images only for reference.

UPA814T-T1

Part No UPA814T-T1
Manufacturer CEL
Catalog RF Transistors (BJT)
Description TRANS NPN HF FT=9GHZ SOT-363
Datasheet
UPA814T-T1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN (Dual)
VCEO Maximum Collector-Emitter Breakdown Voltage 6V
Frequency - Transition 9GHz
Noise Figure (dB Typ @ f) 1.5dB @ 2GHz
Maximum Power Dissipation 200mW
Typical Gain (hFE) (Min) 80 @ 3mA, 1V
Maximum Current Collector 100mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-SO
Win Source Part Number 1116525-UPA814T-T1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UPA814T-T1 CAD Model

Description

The UPA814T-T1 discrete semiconductor product is a SMD (SMT) mounted, 2 NPN (Dual) transistor polarity device from CEL with a frequency transition of 9GHz.

  • Frequency Transition: 9GHz
  • Noise Figure: 1.5dB @ 2GHz
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 6V
  • Gain (hFE) (Min): 80 @ 3mA, 1V
  • Package: 6-SO
  • Power Dissipation: 200mW

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