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Same model may have multiple batches, images only for reference.
2N2907 PBFREE
Same model may have multiple batches, images only for reference.

2N2907 PBFREE

Part No 2N2907 PBFREE
Manufacturer Central Semiconductor Corp
Catalog Transistors (BJT) - Single
Description TRANS PNP 40V 0.6A TO18 / Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 1.8 W Through Hole TO-18
Datasheet
2N2907 PBFREE Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Single Bipolar Transistors
Mfr Central Semiconductor Corp
Series -
Package Bulk
Transistor Type PNP
Current - Collector (Ic) (Max) 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 1.8 W
Frequency - Transition 200MHz
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18
Moisture Sensitivity Level (MSL) Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Standard Package 2,000 pcs
Win Source Part Number 1380715-2N2907 PBFREE
Ultra Librarian 3D Model Ultra Librarian 2N2907 PBFREE CAD Model

Description

The 1380715-2N2907 PBFREE is a single bipolar transistor designed for discrete semiconductor applications.

  • Transistor Type: PNP
  • Power Rating: 1.8 W
  • Collector-Emitter Voltage: 40 V (Max)
  • Collector Current: 600 mA (Max)
  • Vce Saturation: 1.6V @ 50mA, 500mA
  • Collector Cutoff Current: 20nA
  • DC Current Gain (hFE): 100 @ 150mA, 10V
  • Frequency Transition: 200MHz
  • Mounting Type: Through Hole
  • Package: TO-206AA, TO-18-3 Metal Can

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