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2N2907A PBFREE

Part No 2N2907A PBFREE
Manufacturer Central Semiconductor Corp
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 0.6A TO18  /  Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 400 mW Through Hole TO-18
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Central Semiconductor Corp
Package Bulk
Transistor Type PNP
Current - Collector (Ic) (Max) 600 mA
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 400 mW
Frequency - Transition 200MHz
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names 1514-2N2907APBFREE,2N2907ACS,2N2907ACS-ND,2N2907A LEAD FREE
Standard Package 2,000
Win Source Part Number 1120343-2N2907A PBFREE
Ultra Librarian 3D Model Ultra Librarian 2N2907A PBFREE CAD Model

Description

The 2N2907A PNP bipolar transistor is a high-performance transistor that is ideal for use in a variety of electronic applications.

  • Power - Max: 400mW
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Current - Collector (Ic) (Max): 600mA
  • Package: TO-206AA, TO-18-3 Metal Can
  • Frequency - Transition: 200MHz
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA

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