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C2M1000170J-TR

Part No C2M1000170J-TR
Manufacturer Cree/Wolfspeed
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1700V 5.3A D2PAK-7 / N-Channel 1700 V 5.3A (Tc) 78W (Tc) Surface Mount TO-263-7
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Wolfspeed, Inc.
Packaging Reel - TR
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 20V
Vgs(th) (Max) @ Id 3.1V @ 500µA (Typ)
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 1000 V
Power Dissipation (Max) 78W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Supplier Device Package TO-263-7
Case / Package TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Product Number C2M1000170
RoHS Status RoHS Compliant
MSL Level 3 (168 Hours)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 800
Win Source Part Number 1325255-C2M1000170J-TR
Ultra Librarian 3D Model Ultra Librarian C2M1000170J-TR CAD Model

Description

The Wolfspeed C2M1000170J-TR is a SiCFET (Silicon Carbide) N-Channel FET.

  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V
  • Power Dissipation (Max): 78W (Tc)
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Package: TO-263-7 package

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.5523 $58.2092
9+ $11.9403 $107.4627
13+ $11.5672 $150.3736
18+ $11.1941 $201.4938
24+ $10.8209 $259.7016
31+ $9.7015 $300.7465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,150 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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