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CY14V116G7-BZ30XI

Part No CY14V116G7-BZ30XI
Manufacturer Cypress Semiconductor Corp
Catalog IT infrastructure Memory
Description nvSRAM 16Mb
Sample
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Category IT infrastructure Memory
Win Source Part Number 1455537-CY14V116G7-BZ30XI
Manufacturer Cypress Semiconductor Corp
Package Tray
Product Status Active
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 16Mbit
Memory Organization 2M x 8, 1M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 30ns
Voltage - Supply 1.7 V ~ 3.6 V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Mounting Type Surface Mount
Package / Case 165-LBGA
Supplier Device Package 165-FBGA (15x17)
Ultra Librarian 3D Model Ultra Librarian CY14V116G7-BZ30XI CAD Model

Description

The CY14V116G7-BZ30XI, crafted by Cypress, falls within the prestigious category of Static RAM (SRAM), more precisely, it's a variant categorized under non-volatile SRAM (nvSRAM). This device boasts a significant storage capacity of 16Mb, ensuring a reliable data preservation solution. Its non-volatile nature means that data is not lost when the power is turned off, making it an indispensable component in critical systems where data integrity is paramount, such as in aerospace, industrial automation, and automotive electronics. The nvSRAM technology combines the speed of SRAM with the permanency of non-volatile memory, allowing for fast access times alongside secure data retention. The CY14V116G7-BZ30XI exemplifies Cypress's excellence in creating memory solutions that are both rapid and robust, offering designers a reliable memory component that safeguards against data loss in unexpected power-down scenarios.

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