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CY7C1392CV18-250BZC

Part No CY7C1392CV18-250BZC
Manufacturer Cypress Semiconductor Corp
Catalog SRAM
Description 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits (ICs)
Manufacturer Cypress Semiconductor Corp
Packaging Tray
Part Status Obsolete(EOL)
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Synchronous, DDR II
Memory Size 16Mb (2M x 8)
Clock Frequency 250MHz
Memory Interface Parallel
Operating Supply Voltage 1.7 V ~ 1.9 V
Operating Temperature Range 0°C ~ 70°C (TA)
Mounting SMD
Package 165-LBGA
Manufacturer Package 165-FBGA (13x15)
Win Source Part Number 1165130-CY7C1392CV18-250BZC
Manufacturer Homepage www.cypress.com
Popularity Medium
Supply and Demand Status Limited
Family Name CY7C1392CV18
Introduction Date December 03, 2003
ECCN 3A991.b.2.a
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian CY7C1392CV18-250BZC CAD Model

Description

The CY7C1392CV18-250BZC is a high-speed synchronous pipelined burst SRAM (Static Random-Access Memory) from Cypress Semiconductor. Designed for applications demanding high bandwidth and fast data access, it operates at 250 MHz with a 1.8V power supply. This SRAM is well-suited for systems requiring rapid data buffering and retrieval.

Applications

  • Networking: Routers and switches use it for packet buffering and forwarding, ensuring smooth data flow.
  • Telecommunications: Wireless base stations rely on its speed for handling high data rates.
  • High-Performance Computing: Used in cache memory systems to accelerate data access for processors.
  • Data Acquisition: High-speed data acquisition systems benefit from its fast read and write times.
  • Image Processing: Frame buffers in image and video processing equipment.

Features

  • High Clock Speed: Operates at 250 MHz for rapid data transfer.
  • Synchronous Pipelined Burst Architecture: Maximizes data throughput and efficiency.
  • 1.8V Power Supply: Reduces power consumption, making it suitable for low-power applications.
  • Byte Write Enable: Enables selective writing to individual bytes.
  • BGA Package: Offers high pin density and improved thermal performance.
  • ZQ Calibration: Improves signal integrity and reduces output impedance variations.

Benefits

  • Enhanced System Performance: High clock speed and pipelined burst architecture result in significant performance gains.
  • Lower Power Consumption: 1.8V operation reduces power requirements.
  • Improved Signal Integrity: ZQ calibration enhances signal quality.
  • Flexible Write Operations: Byte write enable allows for precise data manipulation.
  • Simplified Board Layout: The BGA package enables a more compact design.

Additional Details

The CY7C1392CV18-250BZC utilizes a burst counter for efficient data transfer. Its synchronous design ensures predictable timing and increased system reliability by synchronizing all data transfers to the clock signal. The BGA package provides better thermal performance compared to traditional packages. ZQ calibration helps maintain signal integrity by dynamically adjusting the output impedance. Consult the Cypress datasheet for detailed electrical characteristics, timing diagrams, package dimensions, and ZQ calibration procedures.

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