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Same model may have multiple batches, images only for reference.
CY7C25632KV18-400BZXI Real Image
Same model may have multiple batches, images only for reference.

CY7C25632KV18-400BZXI

Part No CY7C25632KV18-400BZXI
Manufacturer Cypress Semiconductor Corp
Catalog SRAM
Description 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
Datasheet
CY7C25632KV18-400BZXI Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits (ICs)
Manufacturer Cypress Semiconductor Corp
Packaging Tray
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Synchronous, QDR II+
Memory Size 72Mb (4M x 18)
Clock Frequency 400MHz
Memory Interface Parallel
Operating Supply Voltage 1.7 V ~ 1.9 V
Operating Temperature Range -40°C ~ 85°C (TA)
Mounting SMD
Package 165-LBGA
Manufacturer Package 165-FBGA (13x15)
Win Source Part Number 1165380-CY7C25632KV18-400BZXI
Manufacturer Homepage www.cypress.com
Family Name CY7C25632KV18
Introduction Date December 03, 2003
ECCN 3A991.b.2.a
Country of Origin Philippines, Taiwan\Thailand
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian CY7C25632KV18-400BZXI CAD Model

Description

The CY7C25632KV18-400BZXI is a high-performance synchronous SRAM from Cypress Semiconductor Corp.

  • Memory Size: It features a memory size of 72Mb, clock frequency of 400MHz, and a parallel memory interface.
  • Application: The device is designed to provide low-power, high-speed solutions for networking, telecommunications, and data center applications.
  • Status: With a limited supply and demand status, this device is highly sought after in the market.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $188.7651 $188.7651
2+ $182.4738 $364.9476
3+ $163.5965 $490.7895
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