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Same model may have multiple batches, images only for reference.
S29GL064N11WEI039
Same model may have multiple batches, images only for reference.

S29GL064N11WEI039

Part No S29GL064N11WEI039
Manufacturer Cypress Semiconductor Corp
Catalog Unclassified Memory
Description IC FLASH 64MBIT PARALLEL WAFER  /  FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Parallel 110 ns Wafer
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Cypress Semiconductor Corp
Series GL-N
Package Tray
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 64Mb (8M x 8, 4M x 16)
Memory Interface Parallel
Write Cycle Time - Word, Page 110ns
Access Time 110 ns
Voltage - Supply 1.65V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting SMD (SMT)
Package / Case Die
Supplier Device Package Wafer
Standard Package 25
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Win Source Part Number 1255035-S29GL064N11WEI039
Ultra Librarian 3D Model Ultra Librarian S29GL064N11WEI039 CAD Model

Description

The S29GL064N11WEI039 is a non-volatile memory integrated circuit from Cypress Semiconductor Corp.

  • Series: GL-N series
  • Win Source Part Number: 1255035-S29GL064N11WEI039
  • Memory Size: 64Mb (8M x 8, 4M x 16)
  • Access Time: 110 ns
  • Voltage Range: 1.65V to 3.6V
  • Temperature Range: -40°C to 85°C (TA)
  • Design: To be used in electronic devices
  • Built To: Meet the highest standards of quality and reliability

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