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2DB1188R-13

Part No 2DB1188R-13
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 32V 2A SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 32V
Max Vce (sat) 800mV @ 200mA, 2A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 180 @ 500mA, 3V
Maximum Power Dissipation 1W
Frequency - Transition 120MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89-3
Win Source Part Number 005673-2DB1188R-13
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2DB1188R-13 CAD Model

Description

Product Overview: 2DB1188R-13 by Diodes Incorporated

The 2DB1188R-13 is a high-performance PNP bipolar junction transistor (BJT) brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This transistor is designed for general-purpose amplifier and switching applications, offering a harmonious blend of efficiency and reliability for a wide array of electronic circuits. With its robust construction and superior specifications, the 2DB1188R-13 is an excellent choice for designers and engineers looking to enhance their electronic designs.

Key Features

  • Transistor Polarity: PNP - This indicates that the majority carriers responsible for current flow in the transistor are holes, making it suitable for positive signal amplification.
  • Collector-Emitter Voltage (Vceo): 32V - This parameter specifies the maximum voltage that can be applied across the collector-emitter terminals without causing breakdown.
  • Collector Current (Ic): 1A - The 2DB1188R-13 can handle a continuous collector current up to 1 ampere, making it suitable for moderate power applications.
  • Power Dissipation (Pd): 1.25W - The maximum power that the transistor can dissipate without exceeding its maximum operating temperature.
  • DC Current Gain (hFE): 160 to 320 - This range indicates the transistor's ability to amplify the input current at the base terminal.
  • Operating Temperature Range: -55°C to +150°C - The device can operate effectively over a wide temperature range, ensuring reliability in various environments.
  • Package / Case: SOT-89 - The 2DB1188R-13 comes in a small, surface-mount SOT-89 package, ideal for space-constrained applications.
  • RoHS Compliant: Yes - The product meets the Restriction of Hazardous Substances Directive, making it environmentally friendly and safe for use in electronic equipment.

Applications

The versatility of the 2DB1188R-13 allows it to be used in a variety of applications, including but not limited to:

  • Audio amplifiers and preamplifiers
  • Signal processing
  • Power management circuits
  • Switching circuits
  • Driver stages in amplifiers

With its exceptional performance and Diodes Incorporated's reputation for quality, the 2DB1188R-13 is an ideal component for your next project that requires a reliable PNP transistor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
700+ $0.0718 $50.2600
1,700+ $0.0589 $100.1300
2,630+ $0.0571 $150.1730
3,625+ $0.0552 $200.1000
4,685+ $0.0534 $250.1790
6,265+ $0.0479 $300.0935
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40,000 pieces
MOQ: 700 pcs
Order Increment : 1 pcs
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