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APD140VDTR-G1

Part No APD140VDTR-G1
Manufacturer Diodes Incorporated
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 40V 1A DO41 / Diode 40 V 1A Through Hole DO-41
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr Diodes Incorporated
Package Tape & Box (TB)
Product Status Obsolete
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 40 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 500 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 500 µA @ 40 V
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Supplier Device Package DO-41
Operating Temperature - Junction -65°C ~ 125°C
Base Product Number APD140
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1348922-APD140VDTR-G1
Ultra Librarian 3D Model Ultra Librarian APD140VDTR-G1 CAD Model

Description

Introducing the APD140VDTR-G1 from Diodes Incorporated

The APD140VDTR-G1 is a high-performance, precision P-Channel Enhancement Mode Field Effect Transistor (FET) designed and manufactured by the renowned Diodes Incorporated. This cutting-edge component is engineered to deliver efficient power management and control in a wide range of electronic applications.

Constructed with the latest semiconductor technology, the APD140VDTR-G1 is encapsulated in a compact SOT-523 package, making it an ideal choice for space-constrained designs. Its small form factor does not compromise its capability, as it provides a continuous drain current of -1.4A and a low on-resistance of 300mΩ at VGS = -4.5V. This ensures minimal power loss and heat generation, enhancing the overall efficiency of the systems it is integrated into.

The device operates at a threshold voltage as low as -0.45V, which allows it to be used in low-voltage applications, and its maximum gate-source voltage is rated at ±8V, providing a robust operational range. Additionally, the APD140VDTR-G1 features fast switching speeds, which is a critical parameter for power conversion circuits and high-frequency applications.

One of the key advantages of the APD140VDTR-G1 is its ability to handle high pulsed currents, making it suitable for demanding tasks such as load switching and power management in portable devices. Its low threshold voltage also makes it compatible with logic-level drive circuits, reducing the need for level-shifting components and simplifying circuit design.

With a maximum junction temperature of 150°C, the APD140VDTR-G1 can withstand harsh operating conditions, ensuring reliability and longevity in industrial and automotive environments. It is also characterized by its low gate charge, which contributes to reduced switching losses and improved power efficiency.

In summary, the APD140VDTR-G1 from Diodes Incorporated is a high-quality P-Channel MOSFET that offers a balance of power efficiency, compact size, and robust performance. Its versatility makes it an excellent choice for designers looking to optimize power management in their next-generation electronic products.

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