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BC807-16-7-F

Part No BC807-16-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description Trans GP BJT PNP 45V 0.5A 350mW 3-Pin SOT-23 T/R / TRANS PNP 45V 0.5A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 700mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 100 @ 100mA, 1V
Maximum Power Dissipation 310mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 011075-BC807-16-7-F
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name BC807-16
Introduction Date November 21, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian BC807-16-7-F CAD Model

Description

Diodes Incorporated BC807-16-7-F PNP Transistor

The BC807-16-7-F is a high-quality PNP bipolar junction transistor (BJT) from Diodes Incorporated, a leading manufacturer in the semiconductor industry. This particular transistor is designed for general-purpose amplifier applications and is widely recognized for its reliability and performance.

Constructed with a dielectrically isolated design, the BC807-16-7-F ensures a high degree of precision and stability. It operates with a collector-emitter voltage (VCEO) of -45V and a collector current (IC) of up to -500mA, making it suitable for a variety of electronic circuits. The device is also characterized by a -5V emitter-base voltage (VEBO) and a power dissipation of 300mW, which allows for sufficient headroom in many applications.

The BC807-16-7-F features a DC current gain (hFE) range of 100 to 250, ensuring consistent amplification across different devices. This is particularly important for applications requiring matched pairs or predictable performance. The transistor is housed in a small surface-mount package, specifically the SOT-23, which is ideal for space-constrained applications. Its compact footprint and the ability to be used in automated assembly processes make it a preferred choice for high-volume manufacturing.

With its fast switching times and low saturation voltage, the BC807-16-7-F is an excellent choice for switching and amplification purposes in consumer electronics, industrial control systems, and communication devices. Its robust construction ensures that it can withstand the demanding conditions often encountered in these applications.

Environmental considerations are also taken into account with the BC807-16-7-F. It complies with the RoHS directive, which restricts the use of certain hazardous substances in electrical and electronic equipment. This commitment to environmental responsibility makes it suitable for use in products that are marketed globally, where regulations may be stringent.

In summary, the BC807-16-7-F from Diodes Incorporated is a versatile, high-performance PNP transistor that provides designers with a reliable solution for a broad range of applications. Its technical specifications and small form factor make it an excellent choice for both new designs and as a replacement part in existing equipment.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,300+ $0.0386 $50.1800
3,155+ $0.0317 $100.0135
4,890+ $0.0307 $150.1230
6,735+ $0.0297 $200.0295
8,715+ $0.0287 $250.1205
11,675+ $0.0257 $300.0475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,000 pieces
MOQ: 1300 pcs
Order Increment : 1 pcs
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