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BC846BWQ-7-F

Part No BC846BWQ-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description GENERAL PURPOSE TRANSISTOR SOT32 / Bipolar (BJT) Transistor NPN 65 V 100 mA 300MHz 200 mW Surface Mount SOT-323
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Rohs State Need to verify
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 200 mW
Frequency - Transition 300MHz
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SOT-323
Base Product Number BC846
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1355090-BC846BWQ-7-F
Ultra Librarian 3D Model Ultra Librarian BC846BWQ-7-F CAD Model

Description

Diodes Incorporated BC846BWQ-7-F Transistor

The BC846BWQ-7-F is a high-quality NPN bipolar junction transistor (BJT) from Diodes Incorporated, designed for general-purpose amplifier and switching applications. This device is a part of the BC846 series, renowned for its reliability and performance in a wide range of electronic circuits.

Key Features

  • Transistor Type: NPN - This type of transistor is well-suited for amplification due to its high current gain.
  • Maximum Collector-Emitter Voltage (Vceo): 65V - The maximum voltage that can be applied across the collector-emitter terminals without causing damage.
  • Collector-Base Voltage (Vcbo): 80V - Indicates the maximum voltage the collector can handle with respect to the base when the emitter is open.
  • Emitter-Base Voltage (Vebo): 6V - The maximum voltage that can be applied between the emitter and base terminals.
  • Collector Current - Continuous (Ic): 100mA - The maximum continuous current that can flow through the collector terminal.
  • Power Dissipation (Pd): 250mW - The maximum power that the transistor can dissipate without exceeding the maximum junction temperature.
  • DC Current Gain (hFE): 420 at 2mA at 5V - This parameter indicates the transistor's ability to amplify the input current at the base terminal.
  • Operating and Storage Junction Temperature Range: -55°C to +150°C - Ensures reliable operation over a wide temperature range.
  • Mounting Type: Surface Mount - The SOT-323 package allows for efficient PCB space utilization and is suitable for automated assembly processes.
  • Package / Case: SOT-323-3, SC-70, SOT-323 - A compact package that is ideal for space-constrained applications.

Applications

The BC846BWQ-7-F transistor is incredibly versatile and can be used in a variety of electronic devices. It is commonly found in:

  • Pre-amplification circuits
  • Signal processing
  • Switching circuits
  • Linear amplification stages
  • Low-noise input stages

With its impressive specifications and surface mount design, the BC846BWQ-7-F from Diodes Incorporated is an excellent choice for designers looking for a reliable and efficient NPN transistor for their electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2910 $50.9250
420+ $0.2388 $100.2960
650+ $0.2314 $150.4100
895+ $0.2239 $200.3905
1,160+ $0.2164 $251.0240
1,550+ $0.1940 $300.7000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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