Diodes Incorporated BC847BLP4-7 NPN Bipolar Transistor

The BC847BLP4-7 is a high-performance NPN bipolar junction transistor (BJT) from Diodes Incorporated, designed for general-purpose switching and amplification applications. This small-signal transistor is part of the BC847 series and is housed in a compact DFN1006-3 (DPak) surface-mount package, making it suitable for space-constrained applications.

Key Features:

• Transistor Type: The device is an NPN BJT, which is commonly used in electronic circuits for switching and amplifying signals.
• Package: It comes in a DFN1006-3 (also known as SOT-883) package, ensuring a minimal footprint on printed circuit boards (PCBs).
• Collector-Emitter Voltage (Vceo): The transistor can withstand a maximum collector-emitter voltage of 45V, providing a good margin for many low to medium voltage applications.
• Collector Current (Ic): It has a maximum continuous collector current rating of 100mA, making it suitable for driving small loads.
• DC Current Gain (hFE): The device features a high DC current gain, typically in the range of 200 to 450, which ensures efficient current amplification.
• Power Dissipation: With a power dissipation of 250mW, the BC847BLP4-7 can handle moderate levels of power without overheating.
• RoHS Compliant: The product meets RoHS standards, ensuring that it is free from hazardous substances commonly restricted in electronic components.

Applications:

The BC847BLP4-7 is versatile and can be used in a wide array of applications, including:

• General-purpose switching applications
• Signal amplification in audio and other low-power systems
• Drive circuits for low-power LEDs and relays
• Pre-amplification stages for microcontrollers and other logic circuits
• Portable and battery-operated devices due to its low power consumption

With its robust performance characteristics and compact form factor, the BC847BLP4-7 from Diodes Incorporated is a preferred choice for designers looking for an efficient and reliable solution for their circuit designs.