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BC847C-7-F

Part No BC847C-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 0.1A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA
Typical Gain (hFE) (Min) 420 @ 2mA, 5V
Maximum Power Dissipation 300mW
Frequency - Transition 300MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 011121-BC847C-7-F
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name BC847C
Introduction Date February 09, 2001
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian BC847C-7-F CAD Model

Description

Diodes Incorporated BC847C-7-F NPN Transistor

The BC847C-7-F is a high-quality NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete and semiconductor markets. This particular transistor is designed for general purpose and amplification applications, making it a versatile component in electronic circuits.

The BC847C-7-F is housed in a compact SOT-23 package, which is ideal for automated surface-mount assembly processes and helps in saving valuable board space in dense circuit designs. It features a collector-emitter voltage (Vceo) of 45V and a collector current capability of up to 100mA, which makes it suitable for a wide range of applications. Additionally, its low collector-emitter saturation voltage ensures high efficiency, which is critical in low-voltage operations.

One of the key attributes of the BC847C-7-F is its high current gain bandwidth product (fT), which is typically 100MHz. This characteristic makes the transistor an excellent choice for high-frequency amplification tasks. Moreover, the device has low noise figures, which is particularly beneficial for audio amplification and sensitive signal processing applications.

With its high-performance characteristics, the BC847C-7-F transistor is commonly used in a variety of circuits, including but not limited to, pre-amplification, driver stages in audio amplifiers, signal processing, and switching applications. Its robustness is further evidenced by its ability to withstand an ESD (electrostatic discharge) of 2000V, which provides a degree of protection during handling and operation.

For engineers and designers looking for a reliable and efficient solution for their circuit designs, the BC847C-7-F from Diodes Incorporated is an excellent choice. Its combination of small form factor, high efficiency, and versatility makes it a staple in the semiconductor industry. Furthermore, Diodes Incorporated's commitment to quality ensures that each BC847C-7-F transistor meets the highest standards for performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2911 $50.9425
420+ $0.2389 $100.3380
650+ $0.2314 $150.4100
895+ $0.2239 $200.3905
1,155+ $0.2165 $250.0575
1,550+ $0.1941 $300.8550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 44,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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