Diodes Incorporated BC857BLP4-7B PNP Transistor

The BC857BLP4-7B is a high-quality PNP bipolar junction transistor (BJT) from Diodes Incorporated, designed for general-purpose amplification and switching applications. This small-signal transistor is an ideal component for a wide range of electronic circuits, offering a combination of low voltage operation and high current capability.

Key Features:

• Type: PNP BJT
• Package: Leadless DFN1006-3 (also known as DFN1010-3)
• Configuration: Single
• Collector-Emitter Voltage (Vceo): -45V
• Collector-Base Voltage (Vcbo): -50V
• Emitter-Base Voltage (Vebo): -5V
• Collector Current (Ic): -100mA
• Power Dissipation (Pd): 250mW
• DC Current Gain (hFE): 200 to 450 at -2mA, -5V
• Transition Frequency (ft): 100MHz

This transistor features a collector-emitter voltage of -45V and a collector-base voltage of -50V, making it suitable for a variety of voltage levels within electronic circuits. The BC857BLP4-7B can handle a collector current of up to -100mA, which is substantial for a device of its size, and has a power dissipation capability of 250mW.

The transistor's DC current gain (hFE) ranges from 200 to 450 at -2mA and -5V, ensuring consistent amplification across different loads. Additionally, with a transition frequency of 100MHz, the BC857BLP4-7B is capable of operating at high frequencies, which is beneficial for applications requiring fast switching times.

One of the remarkable features of the BC857BLP4-7B is its packaging. It comes in a compact, leadless DFN1006-3 (DFN1010-3) package that is ideal for space-constrained applications. This package is not only space-efficient but also provides excellent thermal performance, ensuring the transistor operates reliably even under high-power conditions.

Whether you're designing consumer electronics, industrial systems, or portable devices, the BC857BLP4-7B PNP transistor from Diodes Incorporated offers the performance and reliability needed to meet the demands of your application.