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SI7726DN-T1-GE3

Part No SI7726DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 35A 1212-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.6V @ 250μA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 1765pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 10A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 103163-SI7726DN-T1-GE3
Family Name Si7726DN
Introduction Date August 07, 2008
ECCN EAR99
Country of Origin China
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian SI7726DN-T1-GE3 CAD Model

Description

The Vishay Si7726DN-T1-GE3 is an N-channel MOSFET with a maximum drain-source breakdown voltage of 30V and a continuous drain current of 35A at 25 °C.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 35A @ 25 °C
  • Gate-Source Threshold Voltage: 2.6V @ 250μA
  • Maximum Gate Charge: 43nC @ 10V
  • Maximum Rds On: 9.5 mOhm @ 10A and 10V
  • Case/Package: PowerPAK 1212-8
  • Power Dissipation: 3.8W (Ta) and 52W (Tc)
  • RoHS Compliant: Yes
  • ECCN: EAR99
  • Popularity: High
  • Supply and Demand Status: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
195+ $0.3038 $59.2410
465+ $0.2495 $116.0175
720+ $0.2414 $173.8080
995+ $0.2333 $232.1335
1,280+ $0.2264 $289.7920
1,705+ $0.2033 $346.6265
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,900 pieces
MOQ: 195 pcs
Order Increment : 1 pcs
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