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BC857BQ-7-F

Part No BC857BQ-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description GENERAL PURPOSE TRANSISTOR SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Diodes Incorporated
Package Tape & Reel
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V
Power - Max 310 mW
Frequency - Transition 200MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Base Product Number BC857
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 569453-BC857BQ-7-F
Ultra Librarian 3D Model Ultra Librarian BC857BQ-7-F CAD Model

Description

The BC857BQ-7-F from Diodes Incorporated is a high-quality PNP bipolar junction transistor (BJT) that is designed for general-purpose amplifier and switching applications. This component is a part of the BC857 series, which is known for its low current and low voltage capabilities, making it suitable for a wide range of electronic circuits.

Key Features:

  • Transistor Type: PNP - This transistor type is characterized by a layer of N-doped semiconductor material sandwiched between two layers of P-doped material. It primarily conducts when a positive voltage is applied to the base.
  • Package / Case: SOT-23-3 - The BC857BQ-7-F comes in a small SOT-23-3 surface-mount package, which is ideal for space-constrained applications.
  • Collector-Emitter Voltage (Vceo): 45V - This is the maximum voltage that can be applied across the collector-emitter terminals without risking damage to the transistor.
  • Collector Current (Ic Max): 100mA - The maximum continuous current that the transistor can handle through the collector without degradation.
  • Power Dissipation (Pd): 250mW - The amount of power that the BC857BQ-7-F can dissipate without exceeding its maximum operating temperature.
  • DC Current Gain (hFE): 200 to 450 - A measure of the transistor's amplification ability, indicating the ratio of the collector current to the base current.
  • Operating Temperature Range: -55°C to +150°C - The BC857BQ-7-F is designed to operate reliably within this wide temperature range, making it suitable for various environmental conditions.
  • RoHS Compliant: Yes - The product meets the Restriction of Hazardous Substances Directive, which limits the use of certain hazardous materials in electronic equipment.

The BC857BQ-7-F transistor's small form factor and electrical characteristics make it a versatile choice for designers looking to create compact, efficient, and reliable designs. Whether you are developing low-power amplifiers or working on digital switching circuits, this transistor can provide the performance and reliability you need.

As a product of Diodes Incorporated, a leading manufacturer in the semiconductor market, the BC857BQ-7-F is backed by the company's commitment to high-quality standards and customer satisfaction.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,740+ $0.0288 $50.1120
3,705+ $0.0270 $100.0350
5,750+ $0.0261 $150.0750
8,265+ $0.0242 $200.0130
10,730+ $0.0233 $250.0090
13,455+ $0.0223 $300.0465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,530 pieces
MOQ: 1740 pcs
Order Increment : 1 pcs
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