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DDTA114TCA-7-F

Part No DDTA114TCA-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 200MW SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 100 @ 1mA, 5V
Max Vce (sat) 300mV @ 100μA, 1mA
Collector Cut-off Current(Max) 500nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 000496-DDTA114TCA-7-F
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DDTA114TCA-7-F CAD Model

Description

Diodes Incorporated DDTA114TCA-7-F PNP Pre-Biased Transistor

The DDTA114TCA-7-F from Diodes Incorporated is a high-performance PNP pre-biased (also known as digital transistor) designed to offer a compact, efficient solution for driving loads in a variety of electronic applications. This transistor is a part of the DDTA series and is characterized by its built-in resistors, which simplify circuit design by reducing component count and saving on board space.

With its SOT-23 package, the DDTA114TCA-7-F is ideal for surface-mount technology (SMT), providing a space-saving footprint on printed circuit boards (PCBs). The small form factor does not compromise on power, as this transistor is capable of handling a continuous collector current of 100mA, making it suitable for moderate power applications.

The built-in resistor configuration consists of one resistor between the base and the emitter and another between the base and the collector. This setup enables the device to function with a minimal number of external components, making it a convenient choice for designers looking to streamline their circuit designs. The resistor values are carefully chosen to provide optimal performance for the transistor, ensuring reliable operation and consistent characteristics.

Key specifications of the DDTA114TCA-7-F include a collector-emitter voltage (Vceo) of 50V, which allows it to be used in circuits with higher operating voltages. Additionally, the device features a maximum collector-base voltage (Vcbo) of 50V and a maximum emitter-base voltage (Vebo) of 5V. Its transition frequency (fT) is specified at 250MHz, indicating good high-frequency response for applications requiring rapid switching.

The DDTA114TCA-7-F is also recognized for its energy-efficient operation, which is critical in battery-powered devices and systems concerned with power conservation. Its low Vce(sat) ensures minimal voltage drop across the collector-emitter junction, resulting in reduced power loss and improved overall efficiency.

In summary, the DDTA114TCA-7-F PNP pre-biased transistor from Diodes Incorporated is a reliable and convenient component for designers who require a compact, efficient, and easy-to-use solution for driving loads in their electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,655+ $0.0303 $50.1465
3,525+ $0.0284 $100.1100
5,475+ $0.0274 $150.0150
7,845+ $0.0255 $200.0475
10,205+ $0.0245 $250.0225
12,770+ $0.0235 $300.0950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,000 pieces
MOQ: 1655 pcs
Order Increment : 1 pcs
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