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DDTB113ZC-7-F

Part No DDTB113ZC-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 200MW SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 1k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 56 @ 50mA, 5V
Max Vce (sat) 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 000540-DDTB113ZC-7-F
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian DDTB113ZC-7-F CAD Model

Description

Introducing the DDTB113ZC-7-F PNP Pre-Biased Small Signal SOT-23 Transistor from Diodes Incorporated

Diodes Incorporated presents the DDTB113ZC-7-F, a cutting-edge PNP pre-biased small signal transistor that is a part of their broad portfolio of high-quality semiconductor products. Designed for space-saving and power-efficient applications, this transistor comes in a compact SOT-23 package, making it ideal for surface-mount technology (SMT) on densely populated PCBs.

Key Features

  • Pre-Biased Configuration: The DDTB113ZC-7-F is a pre-biased transistor, which means it includes built-in resistive elements. This integration simplifies circuit design and reduces component count, leading to a more streamlined manufacturing process and potential cost savings.
  • PNP Transistor: As a PNP transistor, it is designed to conduct when the voltage at its base is lower than the emitter. This type of transistor is commonly used for amplification and switching in various electronic circuits.
  • Compact SOT-23 Package: The small SOT-23 package is perfect for applications where space is at a premium. Despite its small size, it offers reliable performance and is suitable for automated assembly processes.
  • Low V<sub>CE Saturation Voltage: The device features a low collector-emitter saturation voltage, which translates to reduced power loss and improved efficiency in operation.
  • High Current Gain: With a high current gain (h<sub>FE), this transistor can amplify a small input current to a much larger output current, making it highly effective for a range of electronic applications.

Applications

The versatility of the DDTB113ZC-7-F makes it suitable for a wide array of applications. It is commonly utilized in:

  • Power management circuits
  • Signal processing
  • DC-DC converters
  • Motor control circuits
  • Consumer electronics
  • Telecommunication devices

With its combination of a pre-biased configuration, compact form factor, and efficient performance, the DDTB113ZC-7-F from Diodes Incorporated represents a reliable choice for designers looking to enhance their electronic designs. Whether for industrial, commercial, or consumer applications, this transistor offers a blend of functionality and practicality that is hard to match.

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Pricing & Ordering

Quantity Unit Price Ext. Price
570+ $0.0880 $50.1600
1,390+ $0.0722 $100.3580
2,145+ $0.0700 $150.1500
2,955+ $0.0677 $200.0535
3,820+ $0.0655 $250.2100
5,115+ $0.0587 $300.2505
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 45,000 pieces
MOQ: 570 pcs
Order Increment : 1 pcs
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