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RN1104ACT(TPL3)

Name: RN1104ACT(TPL3)
Brand: Toshiba Semiconductor and Storage
SKU: 296855
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	RN1104ACT(TPL3)
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors (BJT) - Single, Pre - Biased
Description	TRANS PREBIAS NPN 0.1W CST3
Datasheet	RN1104ACT(TPL3) Datasheet
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel - TR
Status	Obsolete(EOL)
Transistor Polarity	NPN - Pre-Biased
Maximum Current Collector	80mA
VCEO Maximum Collector-Emitter Breakdown Voltage	50V
Resistor - Base (R1) (Ohms)	47k
Resistor - Emitter Base (R2) (Ohms)	47k
Typical Gain (hFE) (Min)	80 @ 10mA, 5V
Max Vce (sat)	150mV @ 250μA, 5mA
Collector Cut-off Current(Max)	500nA
Maximum Power Dissipation	100mW
Mounting	SMD (SMT)
Case / Package	CST3
Win Source Part Number	098288-RN1104ACT(TPL3)
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian RN1104ACT(TPL3) CAD Model

Alternative Products

Description

The RN1104ACT(TPL3) is a transistor manufactured by Toshiba Semiconductor and Storage.

Type: pre-biased NPN transistor
Resistor-Base (R1): 47k ohms
Resistor-Emitter Base (R2): 47k ohms
Maximum Collector Current: 80mA
Maximum Collector-Emitter Breakdown Voltage: 50V

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