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DDTB123YC-7-F

Part No DDTB123YC-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 200MW SOT23-3 / Trans Digital BJT PNP 50V 500mA 200mW 3-Pin SOT-23 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 56 @ 50mA, 5V
Max Vce (sat) 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 1032760-DDTB123YC-7-F
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name DDTB123YC
Introduction Date January 21, 2005
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian DDTB123YC-7-F CAD Model

Description

Introducing the DDTB123YC-7-F PNP Pre-Biased Transistor from Diodes Incorporated

Diodes Incorporated, a leading manufacturer in the semiconductor market, presents the DDTB123YC-7-F, a high-performance PNP pre-biased transistor. This device is designed to streamline circuit design by integrating a resistor with the transistor, reducing component count, and simplifying PCB layout. It's an ideal choice for power management and signal processing applications where space and efficiency are paramount.

Key Features:

  • Integrated Biasing Resistors: The DDTB123YC-7-F comes with built-in biasing resistors, which not only saves space but also reduces the number of external components required in a circuit. This integration leads to a more reliable and compact design.
  • Low V<sub>CE(sat): Exhibiting a low collector-emitter saturation voltage, this transistor ensures minimal power loss in switching applications, thereby enhancing overall energy efficiency.
  • High Current Gain: With its high current gain (h<sub>FE), the DDTB123YC-7-F can control a large collector current with a much smaller base current, making it suitable for amplification purposes and driving loads with high efficiency.
  • Surface-Mount Package: Encased in a small SOT-23 package, the device is optimized for automated assembly processes and is well-suited for densely packed PCBs commonly found in modern electronic devices.
  • RoHS Compliant: The DDTB123YC-7-F is fully RoHS compliant, ensuring that it meets the latest environmental standards and regulations for electronic components.

Applications:

The versatility of the DDTB123YC-7-F makes it an excellent choice for a wide range of applications, including but not limited to:

  • Power management circuits
  • DC-DC converters
  • Signal processing
  • Motor control interfaces
  • LED lighting systems
  • Charge pumps

As part of Diodes Incorporated's commitment to providing high-quality components, the DDTB123YC-7-F transistor is manufactured to the highest standards, ensuring reliable performance and consistency across batches. Whether for industrial, commercial, or consumer electronics, this pre-biased transistor is engineered to meet the rigorous demands of today's electronic designs.

For detailed specifications, datasheets, and application notes, visit the Diodes Incorporated website or contact your local sales representative.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,220+ $0.0411 $50.1420
2,960+ $0.0338 $100.0480
4,590+ $0.0327 $150.0930
6,310+ $0.0317 $200.0270
8,170+ $0.0306 $250.0020
10,950+ $0.0274 $300.0300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 1220 pcs
Order Increment : 1 pcs
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