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DDTC113TE-7-F

Part No DDTC113TE-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 150MW SOT523
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 1k
Typical Gain (hFE) (Min) 100 @ 1mA, 5V
Max Vce (sat) 300mV @ 1mA, 10mA
Collector Cut-off Current(Max) 500nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package SOT-523
Win Source Part Number 000547-DDTC113TE-7-F
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian DDTC113TE-7-F CAD Model

Description

Introducing the DDTC113TE-7-F Transistor from Diodes Incorporated

The DDTC113TE-7-F is a robust, high-performance NPN pre-biased small signal transistor designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This transistor is a part of Diodes Incorporated's extensive range of discrete, analog, and mixed-signal components, tailored to provide energy-efficient solutions across various applications.

Featuring a built-in biasing resistor, the DDTC113TE-7-F simplifies circuit design by reducing component count, which in turn minimizes the PCB footprint and lowers overall system costs. This feature makes it an excellent choice for space-constrained applications where efficiency and reliability are paramount.

The DDTC113TE-7-F comes in a compact SOT-523 package, which is not only space-saving but also ensures robustness and durability, withstanding the rigors of modern electronic device operations. It is designed to support a continuous collector current of up to 100mA, making it suitable for a wide range of switching and amplification tasks.

Key specifications of the DDTC113TE-7-F include a collector-emitter voltage (Vceo) of 50V, ensuring it can handle moderate voltage levels, and a resistor ratio of 1, which indicates that the input and output resistors are of equal value, providing a stable operation. This transistor also boasts a low Vce saturation voltage, which translates to reduced power loss and improved energy efficiency in operation.

Applications for the DDTC113TE-7-F are diverse and include but are not limited to digital logic circuits, signal processing, power management, and other general-purpose switching and amplification tasks within consumer electronics, automotive, telecommunications, and industrial markets.

With its combination of compact size, built-in biasing, and energy efficiency, the DDTC113TE-7-F from Diodes Incorporated is an optimal solution for designers looking to enhance their circuit designs with a reliable and cost-effective transistor. Its industry-standard packaging and performance characteristics ensure seamless integration into a wide array of electronic systems.

For detailed information, technical specifications, and application support, visit Diodes Incorporated's official website or contact their customer support team. The DDTC113TE-7-F is a testament to Diodes Incorporated's commitment to providing innovative, high-quality components that push the boundaries of efficiency and compact design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
750+ $0.0669 $50.1750
1,825+ $0.0549 $100.1925
2,820+ $0.0532 $150.0240
3,885+ $0.0515 $200.0775
5,025+ $0.0498 $250.2450
6,730+ $0.0446 $300.1580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 750 pcs
Order Increment : 1 pcs
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