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DDTC123TE-7-F

Part No DDTC123TE-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 150MW SOT523
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Typical Gain (hFE) (Min) 100 @ 1mA, 5V
Max Vce (sat) 300mV @ 500μA, 5mA
Collector Cut-off Current(Max) 500nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package SOT-523
Win Source Part Number 013955-DDTC123TE-7-F
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian DDTC123TE-7-F CAD Model

Description

The DDTC123TE-7-F is a pre-biased transistor from Diodes Incorporated, designed to deliver high-performance and efficiency in a wide variety of applications. This innovative product is part of Diodes Incorporated's extensive range of discrete, logic, analog, and mixed-signal semiconductors, reflecting the company's commitment to providing industry-leading solutions.

Key Features

  • Integrated Resistors: The DDTC123TE-7-F comes with built-in biasing resistors, which simplifies circuit design and reduces component count, leading to a more compact and reliable end product.
  • Surface-Mount Package: Encased in a small SOT-523 surface-mount package, this transistor is ideal for space-constrained applications, allowing for high-density PCB layouts.
  • Low Power Consumption: With its low-power design, the DDTC123TE-7-F is optimized for energy-saving applications, making it suitable for battery-powered devices and power-sensitive systems.
  • High Current Gain: This component features a high current gain (hFE), which ensures efficient operation and signal amplification in various electronic circuits.

Applications

The versatility of the DDTC123TE-7-F allows it to be used in a broad spectrum of applications, including but not limited to:

  • Power management circuits
  • Signal processing
  • DC/DC converters
  • Motor control systems
  • Consumer electronics
  • Telecommunication devices

Technical Specifications

The DDTC123TE-7-F transistor is characterized by its robust technical specifications, which include:

  • Collector-Emitter Voltage (VCEO): 50V
  • Collector Current (IC): 100mA
  • Power Dissipation (PD): 150mW
  • Operating Temperature Range: -55°C to +150°C

Quality and Reliability

Diodes Incorporated ensures that the DDTC123TE-7-F meets the highest quality and reliability standards. Each component undergoes rigorous testing to guarantee performance under various conditions. This commitment to quality makes the DDTC123TE-7-F a trusted choice for professional and consumer-grade applications alike.

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Pricing & Ordering

Quantity Unit Price Ext. Price
410+ $0.1226 $50.2660
995+ $0.1006 $100.0970
1,545+ $0.0974 $150.4830
2,125+ $0.0943 $200.3875
2,745+ $0.0912 $250.3440
3,675+ $0.0817 $300.2475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,950 pieces
MOQ: 410 pcs
Order Increment : 1 pcs
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