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DDTD113EC-7-F

Part No DDTD113EC-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 1k
Resistor - Emitter Base (R2) (Ohms) 1k
Typical Gain (hFE) (Min) 33 @ 50mA, 5V
Max Vce (sat) 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 013989-DDTD113EC-7-F
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DDTD113EC-7-F CAD Model

Description

Introducing the DDTD113EC-7-F from Diodes Incorporated

The DDTD113EC-7-F is a robust pre-biased transistor designed by the renowned manufacturer, Diodes Incorporated. This discrete semiconductor product is a testament to the company's commitment to providing high-quality, reliable components for a wide range of electronic applications. The DDTD113EC-7-F is particularly suitable for applications requiring a combination of a small footprint, low power consumption, and efficient operation.

This transistor comes in a compact SOT-523 package, making it an excellent choice for space-constrained applications. Despite its small size, it delivers outstanding performance, with a built-in resistor that simplifies circuit design and reduces component count. This feature is especially beneficial in automated mass production, where simplicity and reliability are key factors.

Key Features of the DDTD113EC-7-F

  • Integrated Bias Resistor: The device includes a built-in bias resistor, which helps to reduce component count and simplify circuit design.
  • Low V<sub>CE Saturation Voltage: It offers a low collector-emitter saturation voltage, enhancing the overall efficiency of the circuit.
  • High Current Gain: With a high current gain (h<sub>FE), this transistor can amplify signals effectively, making it ideal for signal processing applications.
  • Power Dissipation: The DDTD113EC-7-F is capable of dissipating up to 150mW of power, ensuring stable operation under various conditions.
  • RoHS Compliant: Adhering to environmental standards, this component is RoHS compliant, minimizing the environmental impact and meeting regulatory requirements.

The DDTD113EC-7-F is optimized for use in a variety of applications, including but not limited to, load switches, power management, and signal processing. Its reliable performance and ease of integration make it a preferred choice for designers seeking to enhance their electronic designs.

Whether you are developing consumer electronics, automotive systems, or industrial equipment, the DDTD113EC-7-F from Diodes Incorporated offers a compelling solution that combines miniaturization with robust performance. Its technical excellence and practical design attributes ensure that your projects will benefit from both innovation and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
815+ $0.0617 $50.2855
1,980+ $0.0506 $100.1880
3,065+ $0.0490 $150.1850
4,220+ $0.0474 $200.0280
5,450+ $0.0459 $250.1550
7,300+ $0.0411 $300.0300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,610 pieces
MOQ: 815 pcs
Order Increment : 1 pcs
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