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DDTD114EU-7-F

Part No DDTD114EU-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SOT323
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Tape and Reel
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Maximum) 500mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Minimum) at Ic, Vce 56 at 50mA, 5V
Vce Saturation (Maximum) at Ib, Ic 300mV at 2.5mA, 50mA
Current - Collector Cutoff (Maximum) 500nA
Frequency - Transition 200MHz
Maximum Power 200mW
Mounting Style SMD
Manufacturer Package SC-70, SOT-323
Supplier Device Package SOT-323
Family Part Number DTD114
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 752879-DDTD114EU-7-F
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DDTD114EU-7-F CAD Model

Description

Product Overview: DDTD114EU-7-F by Diodes Incorporated

The DDTD114EU-7-F is a high-quality, robust digital transistor from Diodes Incorporated, designed for applications requiring a combination of a pre-biased resistor and a transistor in a compact package. This product is part of Diodes Incorporated's extensive line of discrete semiconductor components, known for their reliability and performance.

Key Features

  • Integrated Bias Resistor: The DDTD114EU-7-F comes with an integrated 10kΩ bias resistor, which simplifies circuit design by reducing component count and saving board space.
  • Surface-Mount Package: Housed in a small SOT-323 package, this transistor is ideal for space-constrained applications, enabling high-density mounting and contributing to miniaturization efforts.
  • Low V<sub>CE(sat): The device boasts a low collector-emitter saturation voltage, which enhances efficiency by minimizing power loss during switching operations.
  • High Current Gain: With a high current gain (h<sub>FE), this transistor can amplify weak signals effectively, making it suitable for various amplification applications.
  • RoHS Compliant: The DDTD114EU-7-F is fully RoHS compliant, ensuring that it meets environmental standards and restrictions on the use of hazardous substances.

Applications

The versatility of the DDTD114EU-7-F makes it an excellent choice for a wide range of electronic applications. Its primary uses include:

  • Signal processing
  • Power management circuits
  • DC-DC converters
  • Motor control circuits
  • Logic level shifting

Product Specifications

  • Configuration: Single
  • Collector-Base Voltage (VCBO): 50V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 10V
  • Collector Current (IC): 100mA
  • Power Dissipation (PD): 200mW
  • Operating Temperature Range: -55°C to +150°C

In summary, the DDTD114EU-7-F from Diodes Incorporated is a high-performance digital transistor with an integrated bias resistor, ideal for designers looking to optimize their circuit designs with a reliable, compact, and efficient solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9009 $58.5585
160+ $0.7392 $118.2720
245+ $0.7161 $175.4445
335+ $0.6930 $232.1550
435+ $0.6699 $291.4065
580+ $0.6006 $348.3480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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