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DGD2103S8-13

Part No DGD2103S8-13
Manufacturer Diodes Incorporated
Catalog PMIC - Gate Drivers
Description IC GATE DRVR HALF-BRIDGE 8SO / HALF-BRIDGE GATE DRIVER IN SO-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Diodes Incorporated
Packaging Reel
Part Status Obsolete (End Of Life)
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type IGBT, N-Channel MOSFET
Supply Voltage (V) 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.5V
Current - Peak Output (Source, Sink) 290mA, 600mA
Input Type Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap) 600V
Rise / Fall Time (Typ) 100ns, 35ns
Temperature Range - Operating -40°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Manufacturer Pack Quantity 2,500
MSL Level 3 (168 Hours)
Popularity High
Supply and Demand Status Balance
Win Source Part Number 802424-DGD2103S8-13
Ultra Librarian 3D Model Ultra Librarian DGD2103S8-13 CAD Model

Description

Product Overview: DGD2103S8-13 by Diodes Incorporated

The DGD2103S8-13 is a high-performance, single N-channel enhancement mode Power MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This product is designed for a wide range of applications, including but not limited to, power management tasks, switching circuits, and as a load switch in various electronic devices.

Key Features

  • Low On-Resistance: The device boasts an extremely low on-resistance (R<sub>DS(on)), which enhances its efficiency by reducing power loss during operation.
  • High-Speed Switching: With its fast switching capabilities, the DGD2103S8-13 ensures minimal delay and high performance in circuits that require quick response times.
  • Advanced Packaging: Encased in an S8 package, it offers a compact footprint suitable for space-constrained applications while providing excellent thermal performance.
  • Voltage Rating: The MOSFET operates at a drain-source voltage (V<sub>DS) of 30V, making it ideal for a variety of low to medium voltage applications.
  • Gate Charge: It features a low total gate charge (Q<sub>G), which contributes to reduced switching losses and improved overall efficiency.

Applications

The versatility of the DGD2103S8-13 allows it to be utilized in a multitude of applications. It is particularly well-suited for:

  • DC/DC Converters
  • Power Supply Circuits
  • Battery Management Systems
  • Motor Control Modules
  • Load Switching

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products. The DGD2103S8-13 is subjected to rigorous testing and quality control measures to ensure it meets the industry standards for reliability and performance. Customers can trust this MOSFET to deliver consistent operation over a wide range of conditions.

Environmental Compliance

The DGD2103S8-13 is also environmentally friendly, complying with RoHS directives, which restricts the use of certain hazardous substances in electronic equipment. This commitment to environmental sustainability makes it a responsible choice for designers and manufacturers looking to create eco-friendly products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7942 $59.5650
180+ $0.6517 $117.3060
275+ $0.6313 $173.6075
380+ $0.6110 $232.1800
490+ $0.5906 $289.3940
655+ $0.5295 $346.8225
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,500 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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