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DMC2710UVT-7

Part No DMC2710UVT-7
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET BVDSS: 8V-24V TSOT26 / Mosfet Array 20V 1.2A (Ta), 900mA (Ta) 500mW (Ta) Surface Mount TSOT-23-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Diodes Incorporated
Package Tape & Reel
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel Complementary
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta) , 900mA (Ta)
Rds On (Max) @ Id, Vgs 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V, 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 42pF @ 16V, 49pF @ 16V
Power - Max 500mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package TSOT-23-6
Base Product Number DMC2710
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1338832-DMC2710UVT-7
Ultra Librarian 3D Model Ultra Librarian DMC2710UVT-7 CAD Model

Description

Introducing the DMC2710UVT-7 MOSFET from Diodes Incorporated

The DMC2710UVT-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by the renowned semiconductor company, Diodes Incorporated. This state-of-the-art component is tailored for efficient power management and switching applications, making it an ideal choice for contemporary electronic devices.

Key Features

  • High-Speed Switching: The DMC2710UVT-7 is engineered to provide rapid switching speeds, which is crucial for minimizing energy losses during power conversion processes.
  • Low On-Resistance: With an exceptionally low on-resistance (RDS(on)), this MOSFET ensures reduced power dissipation, leading to improved overall system efficiency.
  • Advanced Packaging: Housed in a compact, surface-mount U-DFN2020-6 package, the DMC2710UVT-7 is designed for space-constrained applications, offering excellent thermal performance and a small footprint.
  • High Continuous Drain Current: It boasts a high continuous drain current (ID) rating, which allows it to handle significant power levels suitable for a wide range of applications.

Applications

The versatility of the DMC2710UVT-7 MOSFET makes it perfect for an array of applications, including:

  • Power supply circuits
  • DC-DC converters
  • Motor drives
  • Battery management systems
  • Load switches
  • Portable electronic devices

Technical Specifications

Some of the technical highlights of the DMC2710UVT-7 include:

  • Voltage Rating (VDS): 30V
  • Drain-Source On-Resistance (RDS(on)): 8.5mΩ at VGS = 10V
  • Continuous Drain Current (ID): 25A
  • Power Dissipation (PD): 3.1W
  • Operating Temperature Range: -55°C to +150°C

Quality and Reliability

Diodes Incorporated is committed to delivering high-quality products. The DMC2710UVT-7 is produced with rigorous quality control standards and is designed to meet the reliability demands of industrial and commercial applications. With its excellent performance and robustness, the DMC2710UVT-7 stands out as a superior choice for designers looking to enhance the efficiency and longevity of their electronic systems.

For detailed product information, technical specifications, and support resources, please visit the Diodes Incorporated official website or contact their customer support team.

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Pricing & Ordering

Quantity Unit Price Ext. Price
555+ $0.1042 $57.8310
1,350+ $0.0856 $115.5600
2,095+ $0.0829 $173.6755
2,885+ $0.0802 $231.3770
3,730+ $0.0775 $289.0750
4,985+ $0.0695 $346.4575
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 153,050 pieces
MOQ: 555 pcs
Order Increment : 1 pcs
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