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DMG1012UWQ-7

Part No DMG1012UWQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 8V~24V SOT323 T&R
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 950mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 4.5 V
Vgs (Max) ±6V
Input Capacitance (Ciss) (Max) @ Vds 43 pF @ 16 V
FET Feature -
Power Dissipation (Max) 460mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-363
Package / Case 6-TSSOP, SC-88, SOT-363
Base Product Number DMG1012
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1378260-DMG1012UWQ-7
Ultra Librarian 3D Model Ultra Librarian DMG1012UWQ-7 CAD Model

Description

Product Overview: DMG1012UWQ-7

The DMG1012UWQ-7 is a high-performance, P-channel enhancement mode MOSFET, manufactured by Diodes Incorporated. This electronic component is designed to deliver efficient power management and signal amplification across a wide range of applications. The MOSFET is housed in a compact, surface-mount package, making it well-suited for space-constrained applications.

Key Features

  • Low On-Resistance: The DMG1012UWQ-7 boasts a low on-resistance, which minimizes power loss and improves overall efficiency, making it ideal for power-sensitive circuits.
  • High Power Dissipation: With an ability to dissipate high levels of power, this MOSFET can handle significant electrical loads without compromising performance.
  • Low Threshold Voltage: The device operates at a low threshold voltage, ensuring that it can be controlled by low-voltage signals, which is particularly useful in portable and battery-powered devices.
  • High-Speed Switching: The fast switching capability of the DMG1012UWQ-7 allows for efficient operation in circuits that require rapid state changes, such as power converters and motor controllers.

Applications

The DMG1012UWQ-7 is versatile and can be used in a variety of electronic systems, including:

  • Power Management Circuits
  • Battery-Powered Devices
  • Load/Power Switching
  • DC-DC Converters
  • Motor Control Systems

Technical Specifications

Some of the technical specifications of the DMG1012UWQ-7 include:

  • Drain-Source Voltage (V<sub>DS): -20V
  • Continuous Drain Current (I<sub>D): -1.2A
  • Power Dissipation (P<sub>D): 0.9W
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-323 (SC-70)

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products. The DMG1012UWQ-7 is produced with strict quality control measures and is designed to meet or exceed industry standards for reliability and performance.

Whether you are designing power management systems, portable electronics, or any application requiring a reliable P-channel MOSFET, the DMG1012UWQ-7 is an excellent choice for your design needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
710+ $0.0815 $57.8650
1,520+ $0.0762 $115.8240
2,355+ $0.0736 $173.3280
3,380+ $0.0684 $231.1920
4,395+ $0.0658 $289.1910
5,495+ $0.0631 $346.7345
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 102,045 pieces
MOQ: 710 pcs
Order Increment : 1 pcs
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