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DMG2301LK-7

Part No DMG2301LK-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.4A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 160mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.4 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 156 pF @ 6 V
Power Dissipation (Max) 840mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number DMG2301
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 585371-DMG2301LK-7
Ultra Librarian 3D Model Ultra Librarian DMG2301LK-7 CAD Model

Description

Introducing the DMG2301LK-7 P-Channel MOSFET from Diodes Incorporated

The DMG2301LK-7 is a high-performance, P-Channel enhancement mode field-effect transistor (MOSFET) designed by the renowned semiconductor manufacturer, Diodes Incorporated. It is an essential component for modern electronics, offering a compact and efficient solution for power management and switching applications.

This MOSFET is housed in a small surface-mount package known as the SOT-23, which is widely used in the industry for its space-saving footprint. The DMG2301LK-7 is specifically designed to deliver high-speed switching performance with low on-resistance and low gate charge, making it an ideal choice for power-efficient designs.

Key Features:

  • Low On-Resistance (R<sub>DS(on)): The device features an impressively low on-resistance, which minimizes power loss and improves overall efficiency in circuits.
  • High Power Dissipation: With the ability to dissipate high amounts of power, the DMG2301LK-7 can handle significant currents, making it suitable for demanding applications.
  • Advanced Gate Charge (Q<sub>G): The MOSFET's low gate charge ensures fast switching speeds, which is critical for high-frequency applications.
  • Voltage Rating: It operates at a drain-source voltage (V<sub>DS) of -20V, providing a good margin for a variety of electronic designs.
  • Lead-Free and RoHS Compliant: Adherence to environmental standards, this component is manufactured without the use of harmful lead and meets the Restriction of Hazardous Substances (RoHS) directive.

Applications:

The DMG2301LK-7 is versatile and can be used in a wide range of applications, including but not limited to:

  • Power management modules
  • Load switches
  • Battery management systems
  • DC-DC converters
  • Portable electronic devices

Whether you are designing a sophisticated power management system or looking for a reliable switch for your electronic device, the DMG2301LK-7 P-Channel MOSFET from Diodes Incorporated offers a high-quality solution that engineers and designers can trust. Its performance and efficiency make it a staple in the industry, catering to the evolving demands of modern electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
625+ $0.0802 $50.1250
1,330+ $0.0752 $100.0160
2,070+ $0.0726 $150.2820
2,965+ $0.0675 $200.1375
3,850+ $0.0650 $250.2500
4,800+ $0.0625 $300.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 169,320 pieces
MOQ: 625 pcs
Order Increment : 1 pcs
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