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Same model may have multiple batches, images only for reference.
SI6465DQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI6465DQ-T1-GE3

Part No SI6465DQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 12mOhm @ 8.8A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 4.5 V
Vgs (Max) ±8V
Power Dissipation (Max) 1.5W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Base Product Number SI6465
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277495-SI6465DQ-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI6465DQ-T1-GE3 CAD Model

Description

The SI6465DQ-T1-GE3 is a P-Channel MOSFET manufactured by Vishay Siliconix.

  • Series: TrenchFET®
  • Drain-to-Source Voltage (Vdss): 8V
  • Continuous Drain Current (Id): 8.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 8.8A, 4.5V
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
  • Gate-Source Voltage (Vgs): ±8V
  • Temperature Range: -55°C to 150°C (TJ)

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