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SQ4431EY-T1_GE3

Part No SQ4431EY-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 10.8A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1265pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 6W (Tc)
Maximum Rds On at Id,Vgs 30 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1101711-SQ4431EY-T1_GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQ4431EY-T1_GE3 CAD Model

Description

The Vishay SQ4431EY-T1_GE3 is a P-channel MOSFET with a maximum power dissipation of 6W (Tc).

  • Maximum Power Dissipation: 6W (Tc)
  • Mounting Type: Surface Mount Device (SMD)
  • Package: Reel - TR
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 10.8A (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 30 mOhm @ 6A, 10V
  • Drive Voltage: 10V
  • Maximum Gate Charge: 25nC @ 10V
  • Category: Discrete Semiconductor Products
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5703 $51.3270
190+ $0.5342 $101.4980
295+ $0.5161 $152.2495
420+ $0.4800 $201.6000
545+ $0.4620 $251.7900
680+ $0.4440 $301.9200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 66,550 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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