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Same model may have multiple batches, images only for reference.
BSZ042N04NSG Real Image
Same model may have multiple batches, images only for reference.

BSZ042N04NSG

Part No BSZ042N04NSG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 40A TO220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Rds On (Max) @ Id, Vgs 4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 36µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 20 V
Power Dissipation (Max) 2.1W (Ta), 69W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 5,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 819764-BSZ042N04NSG
Ultra Librarian 3D Model Ultra Librarian BSZ042N04NSG CAD Model

Description

The BSZ042N04NSG is a single N-channel MOSFET transistor manufactured by Infineon Technologies used in discrete semiconductor products.

  • Series: OptiMOS™ 3
  • Package: Bulk
  • Standard Package Size: 5,000 pieces
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Continuous Drain Current (Id) @ 25°C (Tc): 40A
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 20 V
  • Temperature Range: -55°C to 150°C (TJ)

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