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DMG2302U-7

Part No DMG2302U-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 4.2A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 50μA
Max Gate Charge 7nC @ 4.5V
Max Input Capacitance 594.3pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 800mW (Ta)
Maximum Rds On at Id,Vgs 90 mOhm @ 3.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 014377-DMG2302U-7
Family Name DMG2302U
Introduction Date June 17, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian DMG2302U-7 CAD Model

Description

Introducing the DMG2302U-7 MOSFET by Diodes Incorporated

The DMG2302U-7 is a high-performance, P-Channel enhancement mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated. This MOSFET is part of Diodes Incorporated's extensive range of semiconductor products and is engineered to deliver efficient power control and switching functionalities in a wide array of electronic applications.

Constructed using advanced trench MOSFET technology, the DMG2302U-7 offers low on-resistance and a high threshold voltage, making it an ideal choice for power management tasks. The device is housed in a compact SOT-23 package, which is not only space-saving but also ensures a low thermal resistance, allowing for better heat dissipation during operation.

Key Features of the DMG2302U-7

  • Low On-Resistance (RDS(on)): The DMG2302U-7 boasts a low on-resistance, which minimizes conduction losses and enhances overall efficiency in circuits.
  • High Power Dissipation: With an ability to dissipate high levels of power, this MOSFET can handle significant current loads without compromising performance.
  • High Threshold Voltage: A higher threshold voltage ensures that the MOSFET remains off under small voltage fluctuations, providing a stable operation.
  • Advanced Trench Technology: The utilization of trench MOSFET technology allows for a reduction in gate charge and capacitance, which improves switching performance.
  • Compact SOT-23 Package: The small form factor of the SOT-23 package makes it suitable for portable and space-constrained applications.
  • Lead-Free and RoHS Compliant: The DMG2302U-7 is environmentally friendly, adhering to the Restriction of Hazardous Substances (RoHS) directive, making it suitable for use in green products.

Applications

The DMG2302U-7 is versatile and can be used in various applications, including:

  • Load/Power Switching
  • Battery Management Systems
  • DC-DC Converters
  • Power Amplification Stages
  • Portable Electronic Devices

With its robust performance characteristics, the DMG2302U-7 from Diodes Incorporated is a reliable and efficient solution for designers looking to optimize the power management and switching operations in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,030+ $0.0486 $50.0580
2,515+ $0.0398 $100.0970
3,890+ $0.0386 $150.1540
5,350+ $0.0374 $200.0900
6,930+ $0.0361 $250.1730
9,260+ $0.0324 $300.0240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 54,000 pieces
MOQ: 1030 pcs
Order Increment : 1 pcs
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