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DMG4800LFG-7

Part No DMG4800LFG-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 7.44A 8-Pin DFN EP T/R / MOSFET N-CH 30V 7.44A 8DFN
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.44A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 9.47nC @ 5V
Max Input Capacitance 798pF @ 10V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 940mW (Ta)
Maximum Rds On at Id,Vgs 17 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package U-DFN3030-8
Dimension 8-PowerUDFN
Win Source Part Number 014388-DMG4800LFG-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name DMG4800LFG
Introduction Date November 16, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian DMG4800LFG-7 CAD Model

Description

Introducing the DMG4800LFG-7 from Diodes Incorporated

The DMG4800LFG-7 is a state-of-the-art MOSFET transistor designed by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This device is engineered to meet the demanding requirements of modern electronic circuits, providing efficient power management and signal amplification across a wide range of applications.

The DMG4800LFG-7 is a dual N-Channel enhancement mode MOSFET, which comes in a compact PowerDI5060-8 package. It is characterized by its low on-resistance and high switching speed, making it an ideal choice for high-efficiency power management tasks. With a continuous drain current of 30A, it is capable of handling significant power levels, while its 40V drain-source voltage rating ensures it can operate effectively in a variety of circuits.

One of the key features of this MOSFET is its low threshold voltage, which allows for low-voltage operation, thus reducing power consumption and improving energy efficiency. This is particularly beneficial for battery-powered devices where power conservation is critical. Moreover, the DMG4800LFG-7 boasts a low gate charge and capacitance, which contributes to its fast switching performance, an essential attribute for high-frequency applications.

The device is also RoHS compliant, which means it is manufactured without the use of hazardous substances, aligning with global environmental standards and regulations. This commitment to sustainability makes the DMG4800LFG-7 an environmentally friendly choice for manufacturers looking to minimize their ecological footprint.

Overall, the DMG4800LFG-7 MOSFET is a reliable and efficient solution for designers and engineers who require high-performance switching and power management capabilities. Its robust design, combined with Diodes Incorporated's reputation for quality, ensures long-term reliability and performance for a wide array of electronic products, from power supplies and motor controls to lighting systems and consumer electronics.

For more detailed specifications and application information, customers are encouraged to review the full datasheet available on the Diodes Incorporated website or contact their sales representatives for tailored support.

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3402 $51.0300
360+ $0.2791 $100.4760
555+ $0.2704 $150.0720
765+ $0.2617 $200.2005
990+ $0.2530 $250.4700
1,325+ $0.2268 $300.5100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,449 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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