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DMG4N65CTI

Part No DMG4N65CTI
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 4A ITO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 13.5nC @ 10V
Max Input Capacitance 900pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 8.35W (Ta)
Maximum Rds On at Id,Vgs 3 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package ITO-220AB
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1033677-DMG4N65CTI
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMG4N65CTI CAD Model

Description

Introducing the DMG4N65CTI Power Transistor from Diodes Incorporated

The DMG4N65CTI is a high-performance power transistor designed by Diodes Incorporated, a leading manufacturer in the semiconductor market. This cutting-edge product is a testament to the company's commitment to providing innovative solutions that meet the evolving needs of the electronics industry. The DMG4N65CTI is specifically crafted to deliver efficient power control and is suitable for a wide range of applications, including power management systems, converters, and motor drives.

Key Features

  • High Breakdown Voltage: With a breakdown voltage of 650V, the DMG4N65CTI offers robust performance for high-voltage applications, ensuring reliability and stability in demanding environments.
  • Low On-Resistance: The low on-resistance (R<sub>DS(on)) minimizes conduction losses, which enhances the overall efficiency of the device and makes it ideal for energy-sensitive designs.
  • High-Speed Switching: This transistor is designed for fast switching applications, providing quick response times and improved performance in high-frequency circuits.
  • Integrated Protection Features: The DMG4N65CTI includes built-in protection mechanisms such as overcurrent and overtemperature safeguards, which contribute to the longevity and durability of the device.

Applications

The versatility of the DMG4N65CTI makes it suitable for a broad spectrum of applications. It is commonly used in:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Power Factor Correction (PFC) circuits
  • LED Lighting Systems
  • Motor Control Circuits

Quality and Reliability

Diodes Incorporated is known for its stringent quality control processes, and the DMG4N65CTI is no exception. Each transistor is subjected to rigorous testing to ensure it meets the high standards for performance and reliability that customers expect from Diodes Incorporated products.

Environmental Considerations

Committed to environmental stewardship, Diodes Incorporated has designed the DMG4N65CTI to comply with RoHS and Green standards, minimizing the ecological footprint of the product and ensuring it is suitable for use in eco-friendly applications.

With its exceptional features and reliable performance, the DMG4N65CTI from Diodes Incorporated stands out as a superior choice for engineers and designers looking to enhance the efficiency and durability of their power control systems.

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