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DMN2053UVT-7

Part No DMN2053UVT-7
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET BVDSS: 8V-24V TSOT26 T&R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Diodes Incorporated
Series -
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.6A (Ta)
Rds On (Max) @ Id, Vgs 35mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 369pF @ 10V
Power - Max 700mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package TSOT-26
Base Product Number DMN2053
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1376916-DMN2053UVT-7
Ultra Librarian 3D Model Ultra Librarian DMN2053UVT-7 CAD Model

Description

Introducing the DMN2053UVT-7 MOSFET by Diodes Incorporated

Diodes Incorporated, a leading manufacturer in the semiconductor market, presents the DMN2053UVT-7, a high-performance, surface-mount, N-channel enhancement mode field-effect transistor (MOSFET). This product is part of Diodes Incorporated's extensive range of MOSFETs that are designed to cater to a wide array of power management and switching applications.

The DMN2053UVT-7 is built using advanced trench technology to provide superior performance. It features a compact and efficient design, encapsulated in a small SOT-23 package, making it ideal for space-constrained applications. With its low on-resistance and high continuous drain current, it is optimized for low voltage operation, providing efficient power control and reducing energy losses.

Key Features:

  • Low On-Resistance (RDS(on)): The device offers a low on-resistance of typically 30 mΩ at VGS = 4.5V, contributing to its high efficiency and reduced power dissipation.
  • High Continuous Drain Current (ID): It supports a high continuous drain current of up to 4.2 A, making it suitable for handling significant power levels in a compact form factor.
  • Gate-Source Voltage (VGS): The MOSFET can tolerate a ±8V gate-source voltage, providing a robust gate drive capability.
  • Low Threshold Voltage (VGS(th)): The low threshold voltage ensures that the device can be driven at lower gate voltages, enhancing compatibility with low-voltage logic circuits.
  • Fast Switching Speed: Designed for fast switching applications, the DMN2053UVT-7 minimizes switching losses and improves overall efficiency.
  • RoHS Compliant: The product meets RoHS standards, ensuring that it is free from hazardous substances and suitable for use in environmentally sensitive applications.

Applications:

The DMN2053UVT-7 is versatile and can be used in a variety of applications including:

  • Power Management Circuits
  • Load Switches
  • DC-DC Converters
  • Battery Management Systems
  • Motor Drives
  • Portable Devices

Whether you're designing power-efficient portable devices or robust power management systems, the DMN2053UVT-7 from Diodes Incorporated is an excellent choice that combines performance, efficiency, and reliability in a small footprint.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9324 $52.7832
42+ $2.4061 $101.0562
65+ $2.3309 $151.5085
89+ $2.2557 $200.7573
115+ $2.1805 $250.7575
154+ $1.9549 $301.0546
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,745 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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