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DMN3016LFDE-7

Part No DMN3016LFDE-7
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description N-CHANNEL ENHANCEMENT MODE MOSFET | MOSFET N-CH 30V 10A U-DFN2020-6
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 10A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 12mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 25.1nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1415pF at 15V
Power Dissipation (Maximum) 730mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package U-DFN2020-6 (Type E)
Manufacturer Package 6-UDFN Exposed Pad
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 723225-DMN3016LFDE-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN3016LFDE-7 CAD Model

Description

DMN3016LFDE-7 MOSFET by Diodes Incorporated

The DMN3016LFDE-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (MOSFET) brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to deliver efficient power control and switching functionalities in a wide array of electronic applications.

Constructed with advanced trench technology, the DMN3016LFDE-7 offers low on-resistance and a high continuous drain current of 30A, making it an excellent choice for high-efficiency power management tasks. Its low threshold voltage ensures that the device can be driven at lower gate voltages, which is beneficial for battery-operated devices and low-voltage circuits.

The device comes in a compact, surface-mount DFN3030-8 package, which not only saves valuable board space but also enhances thermal performance due to its power dissipation capabilities. With a maximum VDS of 30V, this MOSFET can handle a broad range of applications, from power supplies to motor control circuits, with ease and reliability.

Key features of the DMN3016LFDE-7 include:

  • Low RDS(on) to minimize conduction losses
  • High continuous drain current (ID) of 30A for robust power handling
  • Maximum drain-source voltage (VDS) of 30V for versatile application use
  • Fast switching speed to improve efficiency in switching applications
  • RoHS compliant and Halogen-free, ensuring environmental safety
  • High power and current handling capability in a compact DFN3030-8 package

The DMN3016LFDE-7 is not only a testament to Diodes Incorporated's commitment to quality and performance but also to their dedication to environmental sustainability. This MOSFET is RoHS compliant and Halogen-free, indicating that it is manufactured without the use of hazardous substances, making it a responsible choice for electronic designers who are conscious of their environmental impact.

Whether you are designing power management systems, DC-DC converters, or any application requiring efficient power handling and control, the DMN3016LFDE-7 MOSFET from Diodes Incorporated stands as a reliable and high-performing component that will meet your needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
315+ $0.1596 $50.2740
765+ $0.1309 $100.1385
1,185+ $0.1268 $150.2580
1,630+ $0.1228 $200.1640
2,110+ $0.1187 $250.4570
2,820+ $0.1064 $300.0480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,850 pieces
MOQ: 315 pcs
Order Increment : 1 pcs
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