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DMN3016LPS-13

Part No DMN3016LPS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10.8A PWRDI8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 25.1nC @ 10V
Max Input Capacitance 1415pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.18W (Ta)
Maximum Rds On at Id,Vgs 12 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerDI5060-8
Dimension 8-PowerTDFN
Win Source Part Number 1033743-DMN3016LPS-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN3016LPS-13 CAD Model

Description

DMN3016LPS-13 - A High-Efficiency Power MOSFET from Diodes Incorporated

The DMN3016LPS-13 is a high-performance, N-channel enhancement mode power MOSFET brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to handle high power and efficiency requirements in a wide range of electronic applications. Its robust design and advanced technology make it an ideal choice for power management tasks.

Constructed with Diodes Incorporated's proprietary trench technology, the DMN3016LPS-13 offers low on-resistance, which translates to reduced conduction losses and improved power efficiency. This feature is particularly beneficial in applications where power conservation is crucial, such as in portable electronics and energy-sensitive systems.

The device comes in a compact PowerDI5060-8 package, which not only saves valuable board space but also ensures excellent thermal performance. The package is designed to provide superior heat dissipation, allowing the DMN3016LPS-13 to operate reliably even under high current conditions. This makes it suitable for high-density power applications where maintaining a low temperature is essential for system stability and longevity.

Key specifications of the DMN3016LPS-13 include:

  • Continuous Drain Current (ID): 30A
  • Drain-Source Voltage (VDS): 30V
  • RDS(on): 8.5mΩ at VGS = 10V
  • High Power and Current Handling Capability
  • Fast Switching Speed

These features make the DMN3016LPS-13 an excellent choice for a variety of applications, including:

  • DC/DC Converters
  • Power Supply Load Switches
  • Motor Drives
  • Battery Management Systems
  • Charge and Discharge Switches for Battery Protection

In summary, the DMN3016LPS-13 from Diodes Incorporated is a high-efficiency, reliable power MOSFET that offers low on-resistance, fast switching, and excellent thermal performance in a compact package. Its versatility and robustness make it suitable for a wide range of high-power applications where efficiency and reliability are of paramount importance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3477 $50.4165
355+ $0.2853 $101.2815
545+ $0.2764 $150.6380
750+ $0.2675 $200.6250
970+ $0.2586 $250.8420
1,295+ $0.2318 $300.1810
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,754 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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