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DMN3030LSS-13

Part No DMN3030LSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.1V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 741pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 18 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 080575-DMN3030LSS-13
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian DMN3030LSS-13 CAD Model

Description

DMN3030LSS-13 MOSFET Overview

The DMN3030LSS-13 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated. This component is part of Diodes Incorporated's extensive range of MOSFETs that are known for their efficiency and reliability in various electronic applications.

Key Features

  • Low On-Resistance: The DMN3030LSS-13 offers exceptionally low on-resistance (RDS(on)), which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Continuous Drain Current: With a high continuous drain current (ID), this MOSFET can handle significant power, making it suitable for demanding operations.
  • High Voltage Threshold: The device is capable of withstanding a maximum drain-source voltage (VDS) that ensures safe operation in high-voltage environments.
  • Advanced Packaging: The DMN3030LSS-13 comes in a compact, surface-mount SOP-8 package, which is ideal for space-constrained applications while providing excellent thermal performance.
  • RoHS Compliant: Compliance with the Restriction of Hazardous Substances (RoHS) directive makes this MOSFET an environmentally friendly choice for electronic designs.

Applications

The DMN3030LSS-13 is versatile and can be used in a wide range of electronic circuits, including:

  • Power Management Systems
  • DC/DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Control Circuits

Performance and Quality

Diodes Incorporated ensures that the DMN3030LSS-13 meets high-quality standards, offering reliable performance across its operating temperature range. With its robust construction and advanced manufacturing techniques, this MOSFET is designed for longevity and stable operation in both industrial and consumer electronic applications.

Conclusion

The DMN3030LSS-13 from Diodes Incorporated stands out as a high-efficiency, N-Channel MOSFET that offers designers a compact, high-performance solution for a multitude of power switching and management applications. With its low on-resistance, high current capability, and RoHS compliance, it represents a smart choice for modern electronic designs requiring energy efficiency and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
320+ $0.1570 $50.2400
780+ $0.1289 $100.5420
1,205+ $0.1248 $150.3840
1,660+ $0.1208 $200.5280
2,145+ $0.1168 $250.5360
2,870+ $0.1047 $300.4890
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,165 pieces
MOQ: 320 pcs
Order Increment : 1 pcs
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