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DMN33D8LDW-7

Part No DMN33D8LDW-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 0.25A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 250mA
Maximum Rds On at Id,Vgs 2.4 Ohm @ 250mA, 10V
Gate-Source Threshold Voltage 1.5V @ 100μA
Max Gate Charge 1.23nC @ 10V
Max Input Capacitance 48pF @ 5V
Maximum Power Dissipation 350mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 1033766-DMN33D8LDW-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN33D8LDW-7 CAD Model

Description

The DMN33D8LDW-7 is a high-performance, dual N-channel enhancement mode field effect transistor (FET) designed by Diodes Incorporated. This MOSFET is optimized for power switching applications and is well-suited for use in a variety of electronic circuits, including power management, load switching, and motor control systems. With its compact form factor and high efficiency, the DMN33D8LDW-7 is an ideal choice for space-constrained applications that require low power consumption and minimal heat generation.

Key Features:

  • Low On-Resistance: This device offers exceptionally low on-resistance (R<sub>DS(on)), which translates into reduced conduction losses and improved overall efficiency.
  • High-Speed Switching: The DMN33D8LDW-7 is capable of high-speed switching, allowing for efficient operation in fast-switching applications.
  • Dual N-Channel: The dual N-channel configuration enables the integration of two independent MOSFETs in a single package, which can simplify circuit design and save board space.
  • Low Threshold Voltage: A low gate threshold voltage ensures that the MOSFET can be driven at lower voltages, making it compatible with a wide range of drive circuits and logic levels.
  • Small Package Size: Housed in a compact SOT-363 package, the DMN33D8LDW-7 maximizes board space without sacrificing performance.
  • RoHS Compliant: This product complies with RoHS standards, ensuring that it is free from hazardous substances and suitable for use in environmentally sensitive applications.

Applications:

  • Power Management Systems
  • Load Switches
  • Battery Management
  • DC-DC Converters
  • Motor Control Circuits
  • Portable Electronic Devices

The DMN33D8LDW-7 from Diodes Incorporated is a testament to the company's commitment to providing high-quality, reliable components for advanced electronic applications. Its combination of low on-resistance, high-speed switching, and dual-channel functionality, all in a small package, makes it a versatile choice for engineers and designers aiming to optimize their power-sensitive designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
585+ $0.0855 $50.0175
1,430+ $0.0701 $100.2430
2,210+ $0.0679 $150.0590
3,040+ $0.0658 $200.0320
3,935+ $0.0636 $250.2660
5,265+ $0.0570 $300.1050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,510 pieces
MOQ: 585 pcs
Order Increment : 1 pcs
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