The SI5459DU-T1-GE3 is a P-channel MOSFET transistor designed for use in electronic circuits that require high power dissipation.

• Drain to source voltage: 20 V
• Continuous drain current: 8A @ 25°C
• Rds On (Max) @ Id, Vgs: 52mOhm @ 6.7A, 4.5V
• Vgs(th) (Max) @ Id: 1.4V @ 250μA
• Power dissipation: 3.5W (Ta), 10.9W (Tc)
• Gate charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
• Input capacitance (Ciss) (Max) @ Vds: 665 pF @ 10 V
• Temperature range: -50°C ~ 150°C (TJ)
• Package: PowerPAK® ChipFET™ Single
• Drive voltage (Max Rds On, Min Rds On): 2.5V, 4.5V